主要特点

◆ 自动化程度高，整个工艺过程均由工业计算机控制自动完成；

◆ 具备镀膜程序定距外延、多次外延等功能；

◆ 具备工控机本地监视控制，也可以进行远程监视控制；

◆ 具备控制箱在线UPS功能及停电断点保护程序；

◆ 具备多点温度补偿功能；

◆ 具备多种故障报警及互锁功能；

◆ 具备手动/自动，自主切换功能；

◆ 软硬件具备轴向温度标定及检测功能；

◆ 设备支持GEM/SECS/MES控制集成全自动化功能；

主要技术指标

◆ 工作温度：800-1250℃；

◆ 温区数：5温区

◆ 生长晶圆尺寸：2-6英寸；

◆ 温控精度：±0.1℃；

◆ 恒温区：大于180mm；

◆ 恒温区上下两点温差±0.1℃

◆ 坩埚转速：5-90rpm正反转控制，精度±0.5rpm；

◆ 籽晶杆转速：10-1000rpm正反转控制，精度±0.5rpm。

The main features

◆ High degree of automation, the entire process is automatically completed by industrial computer control;

◆ The coating program has functions such as fixed distance epitaxy and multiple epitaxy;

◆ Equipped with industrial computer local monitoring and control, as well as remote monitoring and control;

◆ Equipped with control box online UPS function and power outage protection program;

◆ Equipped with multi-point temperature compensation function;

◆ Equipped with various fault alarm and interlock functions;

◆ Equipped with manual/automatic and autonomous switching functions;

◆ The software and hardware have axial temperature calibration and detection functions;

◆ The device supports GEM/SECS/MES control integration with full automation functions;

Key parameters

◆ Temperature: 800-1250 ℃;

◆ Temperature zones: 5 zones

◆ Wafer size: 2-6 inches;

◆ Temperature control accuracy: ± 0.1 ℃;

◆ Constant temperature zone: ＞180mm;

◆ The temperature difference between the upper and lower points in the constant temperature zone is ± 0.1 ℃;

◆ Crucible speed: 5-90rpm forward and reverse control, accuracy ± 0.5rpm;

◆ Seed crystal rod speed: 10-1000rpm forward and reverse control, accuracy ± 0.5rpm.