主要应用于集成电路、分立器件、电力电子器件的掺杂、氧化、退火、合金及烧结等工艺，控制半导体材料的杂质分布与电特性；同时支持光电器件的热扩散、氧化工艺和高校及科研机构的微电子工艺实验教学，如热氧化、热扩散等课程设计。

       It is mainly applied to processes such as doping, oxidation, annealing, alloying and sintering in integrated circuits, discrete devices, and power electronic devices, controlling the impurity distribution and electrical properties of semiconductor materials. Meanwhile, it supports the thermal diffusion and oxidation processes of optoelectronic devices, as well as microelectronic process experimental teaching in universities and research institutions, such as curriculum designs like thermal oxidation and thermal diffusion.

核心技术优势：Core technological advantages

全自动化控制：Full Automation Controltechnological advantages

◆ 集成了 SECS/GEM标准通信接口，可无缝对接工厂自动化系统，实现设备状态实时监控、远程参数调控以及生产数据的高效交互，为智能制造提供坚实保障。

◆ SECS/GEM Integration: Equipped with a standard SECS/GEM communication interface, it can seamlessly connect to the factory automation system, enabling real - time monitoring of equipment status, remote parameter adjustment, and efficient exchange of production data, thus providing a solid foundation for intelligent manufacturing.

高精度温控：High- Precision Temperature Control

◆ 控温精度：±0.5，单点温度稳定性±0.5℃/24小时

◆ Temperature Control Accuracy: The temperature control accuracy reaches ±0.5℃, and the single- point temperature stability is ±0.5℃/24 hours.

◆ 支持串级控制和恒温区自动调整。

◆ Control Modes: Supports cascade control and automatic adjustment of the constant temperature zone.

安全性与可靠性：Safety and Reliability

◆ 多重安全保护机制，包括超温报警、气体互锁、断偶报警及缓启动功能。

◆ Multiple Safety Protection Mechanisms: Features multiple safety protection mechanisms, including over temperature alarms, gas interlocks, thermocouple break alarms, and a slow - start function.

灵活配置：FlexibleConfiguration

◆ 支持1-4管系统，工艺管口径覆盖Φ100-400mm，适配不同生产需求。

◆ Tube System Options: Supports 1 - 4 tube systems, with process tube diameters ranging from Φ100 to 400mm to meet different production requirements.

◆ 可选手动或自动送片方式，净化台洁净度达100级（万级厂房环境）

◆ Wafer Loading Options: Offers a choice between manual and automatic wafer loading methods. The cleanliness of the clean bench can reach Class 100 (in a Class 10,000 factory environment).

主要参数:

◆ 适用硅片尺寸：4-8英寸（兼容性设计）

◆ 温度均匀性≤±0.5℃(500-1200℃)

◆ 温度稳定性≤±0.5℃/24h(500-1200℃)

◆ 干氧厚度均匀性：片内/片间/批次间≤± 1%

◆ 氢氧合成厚度均匀性：片内/片间/批次间≤±1%

◆ 金属离子污染：≤5e10 atoms/cm 2

◆ 传送颗粒污染：≤10ea（≥0.3μm）

◆ 工艺颗粒污染：≤30ea（≥0.3μm）

◆ 恒温区长度 ：300-1500m

◆ 气体控MFC精度：±0.5% F.S，气路具备缓启动功能

◆ 推拉舟系统：速度范围20-1000mm/min，精度±1mm/min

Main Parameters

◆ Applicable Wafer Size: 4 - 8 inches (with compatibility design).

◆ Temperature Uniformity: ≤±0.5℃ (500-1200℃)

◆ Temperature Stability: ≤±0.5℃/24h (500-1200℃)

◆ Dry Oxide Thickness Uniformity: Within-wafer / Wafer-to-wafer / Batch-to-batch ≤±1%

◆ Hydrogen-Oxygen Synthesized Oxide Thickness Uniformity: Within-wafer / Wafer-to-wafer / Batch-to-batch ≤±1%

◆ Metal Ion Contamination: ≤5E10 atoms/cm²

◆ Transfer Particle Contamination: ≤10 ea (≥0.3μm)

◆ Process Particle Contamination: ≤30 ea (≥0.3μm)

◆ Constant - temperature Zone Length: 300 - 1500mm.

◆ MFC Gas Control Accuracy: ±0.5% F.S, and the gas path has a slow - start function.

◆ Boat Pushing/Pulling System: The speed range is 20 - 1000mm/min, with an accuracy of ±1mm/min.