晶圆薄膜静态生长立式CVD:Vertical Wafer Film Static Growth CVD

设备主要特点   Features of equipments

◆ 石墨烯薄膜晶圆生长产能（产业化）设备

◆ APC系统：真空碟阀自动控制

◆ 碳源等工艺气体MFC控制

◆ 薄膜制备过程全自动控制

◆ 快速冷却功能

◆ Graphene film growth production capacity (industrialization)equipment

◆ APC system: Automatic control by Vacuum butterfly

◆ Carbon source etc processing gas was controlled by MFC.

◆ Automatic control of film preparation process

◆ Rapid cooling

主要参数（可按要求定制）   Main Specification( Designed by buyer’s request)

◆ 腔室直径：250mm        Diameter of Tube：250mm

◆ 恒温区：400mm       Flat-temperature Zone：400mm

◆ 工艺管材质：SIC/石英       Material of Tube：SIC/Quartz

◆ 极限真空：小于3Pa；       Ultimate Pressure：<3Pa；< /span>

◆ 工艺温度：1020~1050℃        Processing Temperature：1020~1050℃