应用于半导体稀有金属提纯，如锗（Ge）、锑（Sb）、铋（Bi）等，区熔炉可利用杂质在固相和液相中溶解度的差异，通过多次区熔，将杂质集中在材料的特定区域，从而实现稀有金属的提纯。提纯后的稀有金属可用于制造特殊合金、半导体电子器件以及化工催化剂等。

       It is applied to the purification of rare metals in the semiconductor industry, such as germanium (Ge), antimony (Sb), and bismuth (Bi). The zone melting furnace can utilize the difference in the solubility of impurities in the solid and liquid phases. Through multiple zone melting processes, the impurities are concentrated in specific regions of the material, thus achieving the purification of rare metals. The purified rare metals can be used in the manufacture of special alloys, semiconductor electronic devices, and chemical catalysts.

主要技术指标Key parameters

◆ 加热方式：感应加热

◆ 温度范围：500-1200℃

◆ 控温精度：±1℃

◆ 熔区长度：500mm

◆ 移动速度：慢速 0.1 - 200mm/H

◆ 快速：10-500mm/min

◆ 真空度： 配置机械泵：2pa

◆ 配置分子泵：5*10-3pa

◆ 单管处理量:20kg

◆ 单台炉管数量：2-8支（用户可定制）

◆ Heating method: Induction heating

◆ Temperature range: 500 - 1200℃

◆ Temperature control accuracy: ±1℃

◆ Melting zone length: 500mm

◆ Moving speed:◆ Slow speed: 0.1 - 200mm/H◆ Fast speed: 10 - 500mm/min

◆ With mechanical pump: 2 Pa

◆ With molecular pump: 5×10-3 Pa

◆ Single - tube processing capacity: 20 kg

◆ Number of furnace tubes per unit: 2 - 8 (customizable by users)